@prefix p: <http://www.wikidata.org/prop/> .
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#> .
@prefix schema1: <http://schema.org/> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix wd: <http://www.wikidata.org/entity/> .
@prefix wds: <http://www.wikidata.org/entity/statement/> .
@prefix wdt: <http://www.wikidata.org/prop/direct/> .
@prefix wdtn: <http://www.wikidata.org/prop/direct-normalized/> .
@prefix wikibase: <http://wikiba.se/ontology#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

wd:Q1064248 rdfs:label "شبه موصل مشاب"@ar,
        "বহির্জাত অর্ধপরিবাহী"@bn,
        "Semiconductor extrínsec"@ca,
        "extrinsic semiconductor"@en,
        "duonkonduktanto pro fremdaĵoj"@eo,
        "erdieroale estrintseko"@eu,
        "نیمهرسانای غیرذاتی"@fa,
        "מוליך למחצה מאולח"@he,
        "不純物半導体"@ja,
        "불순물 반도체"@ko,
        "ekstrinzični polprevodnik"@sl,
        "杂质半导体"@zh,
        "含杂质半导体"@zh-hans,
        "含雜質半導體"@zh-hant,
        "含雜質半導體"@zh-hk ;
    schema1:dateModified "2026-07-10T14:27:49+00:00"^^xsd:dateTime ;
    schema1:description "és aquell que ha estat dopat; durant la fabricació del cristall semiconductor s'ha incorporat químicament al cristall un oligoelement o producte químic anomenat agent dopant."@ca,
        "semiconductor doped to alter its electrical properties"@en,
        "Bere kristalari ezpurutasunak gehitu zaizkion erdieroalea, dopatutako erdieroalea. Gehitutako ezpurutasunek ezaugarri elektriko bereziak ematen dizkiote material erdieroaleari."@eu,
        "מוליך למחצה שאינו טהור"@he,
        "含有雜質的半導體"@zh ;
    schema1:version 2515892864 ;
    wikibase:identifiers 6 ;
    wikibase:sitelinks 9 ;
    wikibase:statements 11 ;
    skos:altLabel "شبه موصل خارجي"@ar,
        "شبه موصل مشوب"@ar,
        "doped semiconductor"@en,
        "نیمه رسانای غیر ذاتی"@fa,
        "نیمه رسانای غیرذاتی"@fa,
        "نیمه هادی های غیرذاتی"@fa,
        "불순물반도체"@ko,
        "외인성 반도체"@ko,
        "I型半導體"@zh,
        "掺杂半导体"@zh,
        "本質半導體"@zh ;
    p:P10565 wds:Q1064248-C501FA4D-5DA4-48D2-86AC-DC0CEB42389A ;
    p:P1417 wds:Q1064248-27053B54-FC17-4165-AA1A-580ED9BD1928 ;
    p:P14541 wds:Q1064248-448F7A0A-C935-472D-ADD2-CB088F902546 ;
    p:P2079 wds:Q1064248-57b3a67f-4d28-98db-b708-327f9da449b7 ;
    p:P279 wds:Q1064248-211757e8-4d72-fdbb-721c-4da62b007097 ;
    p:P31 wds:Q1064248-c098d5ed-4bf7-a522-d697-b6d55f77ff97 ;
    p:P461 wds:Q1064248-35a5d90e-4f16-19ae-bf07-1827ce887597 ;
    p:P4746 wds:Q1064248-645C4C3B-CEBB-4049-B209-F95D5D435AF4 ;
    p:P527 wds:Q1064248-90bcb373-4aa8-599e-8baa-a7df2ebbc7ea ;
    p:P6366 wds:Q1064248-08BB59D6-1304-4D05-8394-E6CFDAC779CB ;
    p:P646 wds:Q1064248-A5212F84-9F30-47B1-ACA9-B9A154AADB22 ;
    wdtn:P6366 <https://makg.org/entity/35381626> ;
    wdt:P10565 "140377" ;
    wdt:P1417 "science/extrinsic-semiconductor" ;
    wdt:P14541 "1vJtde" ;
    wdt:P2079 wd:Q1130571 ;
    wdt:P279 wd:Q11456 ;
    wdt:P31 wd:Q119892838 ;
    wdt:P461 wd:Q1197777 ;
    wdt:P4746 "135144" ;
    wdt:P527 wd:Q15119237 ;
    wdt:P6366 "35381626" ;
    wdt:P646 "/m/02ph9bv" .