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Entity
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floating-gate MOSFET
<http:/
/
www.wikidata.org/
entity/
Q933186>
MOSFET whose gate is left galvanically isolated in a circuit
rdfs:
label
ca
de
en
fa
id
it
ja
ko
ru
uk
vi
zh
zh-cn
zh-hans
zh-hant
"FGMOS"
@vi
"Floating Gate MOSFET"
@it
"Floating-Gate-Transistor"
@de
"MOSFET de porta flotant"
@ca
"Memori gerbang mengambang"
@id
"floating-gate MOSFET"
@en
"Транзистор с плавающим затвором"
@ru
"Транзистор із плавним затвором"
@uk
"ماسفت گیت-شناور"
@fa
"浮動ゲートトランジスタ"
@ja
"浮柵電晶體"
@zh-hant
"浮栅晶体管"
@zh-cn
"浮栅晶体管"
@zh-hans
"浮閘非揮發性半導體記憶體"
@zh
"플로팅 게이트 MOSFET"
@ko
skos:
alt
Label
ca
de
en
fa
it
nb
nn
zh
"FGMOS"
@ca
"FGMOS"
@en
"FGMOS"
@nb
"FGMOS"
@nn
"Floating Gate"
@de
"Floating Gate"
@it
"Floating Gate transistor"
@it
"Floating-Gate"
@de
"Transistor Floating Gate"
@it
"floating-gate transistor"
@en
"افجیماس"
@fa
"ترانزیستور گیت-شناور"
@fa
"浮栅晶体管"
@zh
schema:
description
ca
en
id
"MOSFET whose gate is left galvanically isolated in a circuit"
@en
"perangkat yang dapat menyimpan besaran fisika dalam waktu yang cukup lama"
@id
"és un tipus de transistor d'efecte de camp d'òxid de metall i semiconductor (MOSFET) on la porta està aïllada elèctricament."
@ca
schema:
date
Modified
"2026-03-24T19:11:17+00:00"
^^xsd:dateTime
schema:
version
2475088431
wikibase:
identifiers
3
wikibase:
sitelinks
12
wikibase:
statements
8
p:
P1417
wd:
statement/Q933186-A3E27DF5-18A3-4416-9A0F-414E2F7C5318
p:
P279
wd:
statement/Q933186-9f7e4269-47ed-4645-5f73-7437b76bc658
wd:
statement/Q933186-d6846519-481c-e92c-5c9a-2652fcb664be
p:
P31
wd:
statement/Q933186-2e80970a-447d-ea47-80ab-37f9f0280c8d
wd:
statement/Q933186-521e708b-4368-07af-29f0-e9c1739d124a
p:
P366
wd:
statement/Q933186-6c8bce98-4bb2-8dc4-2c88-cc5b8a336589
p:
P6366
wd:
statement/Q933186-8ED25D36-A2C9-48FC-9C80-C4D7D364DE30
p:
P646
wd:
statement/Q933186-5EA478CA-030D-4DA7-89CE-F57F6D9F8C9A
p:
direct-
normalized/
P6366
<https:/
/
makg.org/
entity/
2781285199>
wdt:
P1417
"topic/floating-gate"
wdt:
P279
field-effect transistor
MOSFET
wdt:
P31
type of physical object by use
type of electronic component
wdt:
P366
memory cell
wdt:
P6366
"2781285199"
wdt:
P646
"/m/02pb39b"
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